SDF920NE 11a, 20v, r ds(on) 22 m ?? dual n-ch enhancement mode power mosfet elektronische bauelemente 20-apr-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers,. printers, pcmcia cards, cellular and cordless telephones features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe dfn2x5 saves board space ? fast switching speed ? high performance trench technology package information package mpq leader size dfn2x5 5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current 1 t a = 25c i d 11 a t a = 70c 8.5 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 3.1 a total power dissipation 1 t a = 25c p d 3.5 w t a = 70c 1.8 w operating junction & stor age temperature range t j , t stg -55~150 c thermal resistance ratings maximum junction-to-ambient 1 t Q 10 sec r ja 36 c / w steady state 76 c / w notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 0.70 0.80 i 2.00 bsc b 0.00 0.06 j 1.30 1.55 c 0.10 0.20 k 2.60 2.86 d0 12 l 1.67 bsc e 5.00 bsc m 0.15 bsc f 4.50 bsc n 0.40 0.60 g 0.50 bsc o 0.00 0.10 h 0.20 0.30 dfn2x5 b c a i j k l m n o e d f g h 2k v
SDF920NE 11a, 20v, r ds(on) 22 m ?? dual n-ch enhancement mode power mosfet elektronische bauelemente 20-apr-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat condition static gate threshold voltage v gs(th) 0.5 - - v v ds =v gs , i d =250 a gate-body leakage current i gss - - 10 a v ds =0, v gs = 12v zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 - - 30 v ds =16v, v gs =0, t j =55c on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =4.5v drain-source on-resistance 1 r ds(on) 10 18 22 m ? v gs =4.5v, i d =6.7a 10.5 19 23 v gs =4v, i d =5.6a 11 23 28 v gs =2.5v, i d =4.5a forward transconductance 1 g fs - 22 - s v ds =15v, i d =6a diode forward voltage v sd - 0.7 - v i s =0.5a, v gs =0 dynamic 2 total gate charge q g - 9.2 - nc i d =6a, v ds =10v, v gs =4.5v gate-source charge q gs - 1.9 - gate-drain charge q gd - 2.8 - turn-on delay time t d(on) - 1.7 - ns v dd =10v, v gen =4.5v i d =1a, r l =15 ? rise time t r - 2.3 - turn-off delay time t d(off) - 1.1 - fall time t f - 4.4 - notes 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
SDF920NE 11a, 20v, r ds(on) 22 m ?? dual n-ch enhancement mode power mosfet elektronische bauelemente 20-apr-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ratings and characteristic curves
SDF920NE 11a, 20v, r ds(on) 22 m ?? dual n-ch enhancement mode power mosfet elektronische bauelemente 20-apr-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ratings and characteristic curves
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